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1/12 march 2004 stb20nm60a-1 stp20nm60a - STF20NM60A n-channel 650v@tj max -0.25 ? - 20a i2pak/to-220/to-220fp mdmesh? mosfet 1 2 3 1 2 3 to-220 to-220fp i2pak 1 2 3 typical r ds (on) = 0.25 ? high dv/dt low input capacitance and gate charge low gate input resistance description the mdmesh ? is a new revolutionary mosfet tech- nology that associates the multiple drain process with the company ? s powermesh ? horizontal layout. the resulting product has an outstanding low on-resis- tance, impressively high dv/dt and excellent avalanche characteristics. the adoption of the company ? s propri- etary strip technique yields overall dynamic perfor- mance that is significantly better than that of similar competition ? s products. applications specifically designed for adaptors in quasi-resonant configuration order codes type v dss @tj max r ds(on) i d stb20nm60a-1 stp20nm60a STF20NM60A 650 v 650 v 650 v <0.29 ? <0.29 ? <0.29 ? 20 a 20 a 20 a part number marking package packaging stb20nm60a-1 b20nm60a i 2 pa k tube stp20nm60a p20nm60a to-220 tube STF20NM60A f20nm60a to-220fp tube i nternal schematic diagram
stb20nm60a-1/stp20nm60a/STF20NM60A 2/12 absolute maximum ratings ( ) pulse width limited by safe operating area (1) i sd 20a, di/dt 400 a/s, v dd v (br)dss ,t j t jmax. (*) limited only by maximum temperature allowed thermal data electrical characteristics (t case =25 c unless otherwise specified) on/off symbol parameter value unit stb20nm60a-1 stp20nm60a STF20NM60A v gs gate-source voltage 30 v i d drain current (continuous) at t c =25 c 20 20(*) a i d drain current (continuous) at t c = 100 c 12.6 12.6(*) a i dm ( ) drain current (pulsed) 80 80(*) a p tot total dissipation at t c =25 c 192 45 w derating factor 1.2 0.36 w/ c dv/dt (1) peak diode recovery voltage slope 15 v/ns v iso insulation winthstand voltage (dc) -- 2500 v t stg storage temperature ? 55 to 150 c t j max. operating junction temperature i 2 pak/to-220 to-220fp rthj-case thermal resistance junction-case max 0.65 2.8 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose 300 c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs =0 600 v i dss zero gate voltage drain current (v gs =0) v ds = max rating 1a v ds = max rating, t c = 125 c 10 a i gss gate-body leakage current (v ds =0) v gs =30v 100 na v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 23 4v r ds(on) static drain-source on resistance v gs = 10v, i d = 10a 0.25 0.29 ?
3/12 stb20nm60a-1/stp20nm60a/STF20NM60A electrical characteristics (continued) dynamic (1) pulsed: pulse duration = 300 s, duty cycle 1.5 %. (2) c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss . switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds >i d(on) xr ds(on)max, i d = 10a 11 s c iss input capacitance v ds = 25v, f = 1 mhz, v gs =0 1630 pf c oss output capacitance 350 pf c rss reverse transfer capacitance 33 pf c oss eq. (2) equivalent output capacitance v gs =0v,v ds = 0v to 400v 150 pf symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd =300v,i d =10a r g =4.7 ? v gs =10v (see test circuit, figure 3) 20 ns t r rise time 16 ns q g total gate charge v dd =400v,i d = 20a, v gs =10v 45 60 nc q gs gate-source charge 8.2 nc q gd gate-drain charge 19 nc symbol parameter test conditions min. typ. max. unit t d(off) turn-off delay time v dd =300v,i d =20a, r g =4.7 ?, v gs = 10v (see test circuit, figure 5) 46 ns t f fall time 20 ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 20 a i sdm (2) source-drain current (pulsed) 80 a v sd (1) forwardonvoltage i sd =20a,v gs =0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20a,di/dt=100a/s, v dd =50v,t j =25 c (see test circuit, figure 5) 432 5.1 23.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd =20a,di/dt=100a/s, v dd =50v,t j = 150 c (see test circuit, figure 5) 595 7.3 24.8 ns c a
stb20nm60a-1/stp20nm60a/STF20NM60A 4/12 transfer characteristics output characteristics thermal impedance for to-220/i2pak safe operating area for to-220/i2pak safe operating area for to-220fp thermal impedance for to-220fp
5/12 stb20nm60a-1/stp20nm60a/STF20NM60A normalized on resistance vs temperature capacitance variations gate charge vs gate-source voltage transconductance static drain-source on resistance normalized gate thereshold voltage vs temp.
stb20nm60a-1/stp20nm60a/STF20NM60A 6/12 normalized bvdss vs temperature source-drain diode forward characteristics typical switching time vs rg typical drain current slope vs rg typical drain source voltage slope vs rg typical switching losses vs rg
7/12 stb20nm60a-1/stp20nm60a/STF20NM60A typical coss stored energy vs rg
stb20nm60a-1/stp20nm60a/STF20NM60A 8/12 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load
9/12 stb20nm60a-1/stp20nm60a/STF20NM60A dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 a1 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 0.027 c2 1.23 1.32 0.048 0.052 d 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 e 10 10.40 0.393 0.410 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l2 1.27 1.40 0.050 0.055 to-262 (i 2 pak) mechanical data
stb20nm60a-1/stp20nm60a/STF20NM60A 10/12 dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ? p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data
11/12 stb20nm60a-1/stp20nm60a/STF20NM60A l2 a b d e h g l6 f l3 g1 123 f2 f1 l7 l4 l5 dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 b 2.5 2.7 0.098 0.106 d 2.5 2.75 0.098 0.108 e 0.45 0.7 0.017 0.027 f 0.75 1 0.030 0.039 f1 1.15 1.7 0.045 0.067 f2 1.15 1.7 0.045 0.067 g 4.95 5.2 0.195 0.204 g1 2.4 2.7 0.094 0.106 h 10 10.4 0.393 0.409 l2 16 0.630 l3 28.6 30.6 1.126 1.204 l4 9.8 10.6 .0385 0.417 l5 2.9 3.6 0.114 0.141 l6 15.9 16.4 0.626 0.645 l7 9 9.3 0.354 0.366 ? 3 3.2 0.118 0.126 to-220fp mechanical data
stb20nm60a-1/stp20nm60a/STF20NM60A 12/12 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics all other names are the property of their respective owners ? 2004 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com

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